Manufacturer: | onsemi | |
Product Category: | IGBT Transistors | |
RoHS: | Details | |
REACH - SVHC: | Details | |
Technology: | Si | |
Package / Case: | TO-3PN | |
Mounting Style: | Through Hole | |
Configuration: | Single | |
Collector- Emitter Voltage VCEO Max: | 650 V | |
Collector-Emitter Saturation Voltage: | 1.9 V | |
Maximum Gate Emitter Voltage: | - 20 V, 20 V | |
Continuous Collector Current at 25 C: | 120 A | |
Pd - Power Dissipation: | 600 W | |
Minimum Operating Temperature: | - 55 C | |
Maximum Operating Temperature: | + 175 C | |
Series: | FGA60N65SMD | |
Packaging: | Tube | |
Brand: | onsemi / Fairchild | |
Gate-Emitter Leakage Current: | 400 nA | |
Product Type: | IGBT Transistors | |
Factory Pack Quantity: | 30 | |
Subcategory: | IGBTs | |
Unit Weight: | 0.225789 oz |
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