Manufacturer: | Infineon | |
Product Category: | MOSFET | |
RoHS: | Details | |
Technology: | Si | |
Mounting Style: | Through Hole | |
Package / Case: | TO-220-3 | |
Transistor Polarity: | N-Channel | |
Number of Channels: | 1 Channel | |
Vds - Drain-Source Breakdown Voltage: | 75 V | |
Id - Continuous Drain Current: | 180 A | |
Rds On - Drain-Source Resistance: | 3.6 mOhms | |
Vgs - Gate-Source Voltage: | - 20 V, + 20 V | |
Vgs th - Gate-Source Threshold Voltage: | 4 V | |
Qg - Gate Charge: | 180 nC | |
Minimum Operating Temperature: | - 55 C | |
Maximum Operating Temperature: | + 175 C | |
Pd - Power Dissipation: | 330 W | |
Channel Mode: | Enhancement | |
Packaging: | Tube | |
Brand: | Infineon Technologies | |
Configuration: | Single | |
Height: | 15.65 mm | |
Length: | 10 mm | |
Product Type: | MOSFET | |
Factory Pack Quantity: | 1000 | |
Subcategory: | MOSFETs | |
Transistor Type: | 1 N-Channel | |
Width: | 4.4 mm | |
Unit Weight: | 0.068784 oz |
Add stepwise price
Qty. | Unit Price |
1000 | $1.251 |
2000 | $1.224 |
5000 | $1.17 |
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