Manufacturer: | Infineon | |
Product Category: | MOSFET | |
RoHS: | Details | |
Technology: | Si | |
Mounting Style: | Through Hole | |
Package / Case: | TO-220-3 | |
Transistor Polarity: | N-Channel | |
Number of Channels: | 1 Channel | |
Vds - Drain-Source Breakdown Voltage: | 800 V | |
Id - Continuous Drain Current: | 11 A | |
Rds On - Drain-Source Resistance: | 450 mOhms | |
Vgs - Gate-Source Voltage: | - 20 V, + 20 V | |
Vgs th - Gate-Source Threshold Voltage: | 2.1 V | |
Qg - Gate Charge: | 64 nC | |
Minimum Operating Temperature: | - 55 C | |
Maximum Operating Temperature: | + 150 C | |
Pd - Power Dissipation: | 156 W | |
Channel Mode: | Enhancement | |
Tradename: | CoolMOS | |
Series: | CoolMOS C3 | |
Packaging: | Tube | |
Brand: | Infineon Technologies | |
Configuration: | Single | |
Fall Time: | 10 ns | |
Height: | 15.65 mm | |
Length: | 10 mm | |
Product Type: | MOSFET | |
Rise Time: | 15 ns | |
Factory Pack Quantity: | 500 | |
Subcategory: | MOSFETs | |
Transistor Type: | 1 N-Channel | |
Typical Turn-Off Delay Time: | 72 ns | |
Typical Turn-On Delay Time: | 25 ns | |
Width: | 4.4 mm | |
Part # Aliases: | SPP11N8C3XK SP000683158 SPP11N80C3XKSA1 | |
Unit Weight: | 0.068784 oz |
Add stepwise price
Qty. | Unit Price |
500 | $1.539 |
1000 | $1.323 |
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