Manufacturer: | Texas Instruments | |
Product Category: | MOSFET | |
RoHS: | Details | |
Technology: | Si | |
Mounting Style: | SMD/SMT | |
Package / Case: | WSON-6 | |
Transistor Polarity: | N-Channel | |
Number of Channels: | 1 Channel | |
Vds - Drain-Source Breakdown Voltage: | 12 V | |
Id - Continuous Drain Current: | 14.4 A | |
Rds On - Drain-Source Resistance: | 9.3 mOhms | |
Vgs - Gate-Source Voltage: | - 8 V, + 8 V | |
Vgs th - Gate-Source Threshold Voltage: | 580 mV | |
Qg - Gate Charge: | 5.1 nC | |
Minimum Operating Temperature: | - 55 C | |
Maximum Operating Temperature: | + 150 C | |
Pd - Power Dissipation: | 2.7 W | |
Channel Mode: | Enhancement | |
Tradename: | NexFET | |
Series: | CSD13202Q2 | |
Packaging: | Reel | |
Packaging: | Cut Tape | |
Packaging: | MouseReel | |
Brand: | Texas Instruments | |
Configuration: | Single | |
Fall Time: | 13.6 ns | |
Forward Transconductance - Min: | 44 S | |
Height: | 0.75 mm | |
Length: | 2 mm | |
Product Type: | MOSFET | |
Rise Time: | 28 ns | |
Factory Pack Quantity: | 3000 | |
Subcategory: | MOSFETs | |
Transistor Type: | 1 N-Channel | |
Typical Turn-Off Delay Time: | 11 ns | |
Typical Turn-On Delay Time: | 4.5 ns | |
Width: | 2 mm | |
Unit Weight: | 0.000208 oz |
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